PD -2.462 rev. A 03/99
? Reduced RFI and EMI
? Reduced Snubbing
? Extensive Characterization of
Recovery Parameters
Features
Description
HEXFRED
TM
diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA60MB60C
Absolute Maximum Ratings (per Leg)
Note:
Limited by junction temperature
?
L = 100μH, duty cycle limited by max T
J
?
125°C
W
°C/W
K/W
Thermal - Mechanical Characteristics
Storage Temperature Range °C-55 to +150
35 (4.0) –––– 50 (5.7)
ANODE
COMMON
CATHODE
ANODE
2
1
(1-3)
(4-6)
(7-9)
(ISOLATED BASE)
Parameter
Max. Units
VR
Cathode-to-Anode Voltage 600 V
IF
@ T
C
= 25°C Continuous Forward Current 50
IF
@ T
C
= 100°C Continuous Forward Current 24 A
IFSM
Single Pulse Forward Current
200
EAS
Non-Repetitive Avalanche Energy ?
220 μJ
PD
@ T
C
= 25°C Maximum Power Dissipation 125
PD
@ T
C
= 100°C Maximum Power Dissipation 50
TJ
Operating Junction and
TSTG
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Parameter Min. Typ.
Max.
Units
RθJC
Junction-to-Case, Single Leg Conducting
–––– –––– 1.0
Junction-to-Case, Both Legs Conducting
–––– –––– 0.50
RθCS
Case-to-Sink, Flat, Greased Surface
–––– 0.10 ––––
Wt Weight
–––– 58 (2.0)
–––– g (oz)
Mounting Torque
lbf?in
(N?m)
D-60
(MODIFIED T0-249AA)
A
VR
= 600V
VF(typ.)?
= 1.1V
IF(AV)
= 60A
Qrr
(typ.) = 200nC
IRRM(typ.)= 6A
trr(typ.)= 30ns
di(rec)M/dt (typ.)?
= 170A/μs
1
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
HFA70NC60CSL
DIODE HEXFRED 600V 56A D61-8-SL
HFA70NC60C
DIODE HEXFRED 600V 56A D61-8
HFA75MB40C
DIODE HEXFRED 400V 75A D-60
HFA80NC40CSL
DIODE HEXFRED 400V 85A D61-8-SL
HFA80NC40CSM
DIODE HEXFRED 400V 85A D61-8-SM
HFA80NC40C
DIODE HEXFRED 400V 85A D61-8
IMN10T108
DIODE SWITCH 80V 100MA SOT-457
IMN11T110
DIODE SW 80V 100MA SOT-457 TR
相关代理商/技术参数
HFA60MC60C
功能描述:DIODE HEXFRED 600V 50A TO-249AA RoHS:是 类别:半导体模块 >> 二极管，整流器 系列:HEXFRED® 标准包装:10 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:1.45V @ 30A 电流 - 在 Vr 时反向漏电:15µA @ 400V 电流 - 平均整流 (Io)（每个二极管）:30A 电压 - (Vr)（最大）:400V 反向恢复时间(trr):65ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:2 个独立式 安装类型:底座安装 封装/外壳:ISOTOP 供应商设备封装:ISOTOP? 包装:管件
HFA7-0002/883
制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HFA7-0002-5
制造商:Rochester Electronics LLC 功能描述:- Bulk
HFA7-0002-9
制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HFA7-0003/883 DIE
制造商:Harris Corporation 功能描述:
HFA7-0003-5
制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HFA7-0003-9
制造商:Rochester Electronics LLC 功能描述:- Bulk
HFA7-0005/883
制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: